HXY MOSFET · FETs & Power MOSFETs · MPN DMTH6010LPS-13-HXY
No reviews yet — be the first to review HXY MOSFET DMTH6010LPS-13-HXY.
| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 90nC@10V |
| Output Capacitance(Coss) | 286pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 108W |
| Reverse Transfer Capacitance (Crss@Vds) | 257pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.136nF |
60V 80A 3V 108W 6mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS