HXY MOSFET DMT69M8LSS-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN DMT69M8LSS-HXY

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Specifications

Output Capacitance(Coss)141pF
Pd - Power Dissipation1.64W
ConfigurationStandalone
Gate Charge(Qg)48nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)15.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.89nF

Technical details

N-Channel 60V 10A 3W Surface Mount SOP-8

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