HXY MOSFET · FETs & Power MOSFETs · MPN DMT67M8LPSW-13-HXY
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| Output Capacitance(Coss) | 773pF |
|---|---|
| Pd - Power Dissipation | 73.5W |
| Gate Charge(Qg) | 28.5nC@10V |
| Drain to Source Voltage | 60V |
| Configuration | Standalone |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Reverse Transfer Capacitance (Crss@Vds) | 46.8pF |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.673nF |
73.5W 60V 100A 2.9V 3.7mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS