HXY MOSFET · FETs & Power MOSFETs · MPN DMT3009UFVW-13-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 7.2nC@4.5V |
| Current - Continuous Drain(Id) | 30A |
| Output Capacitance(Coss) | 81pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 572pF |
30V 30A 2.5V 20W 8mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS