HXY MOSFET DMN3009SK3-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN DMN3009SK3-HXY

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Specifications

Output Capacitance(Coss)1.022nF
Pd - Power Dissipation87W
ConfigurationStandalone
Gate Charge(Qg)143nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Reverse Transfer Capacitance (Crss@Vds)718pF
RDS(on)1.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.272nF

Technical details

N-Channel 30V 160A 87W Surface Mount TO-252-2L

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