HXY MOSFET · FETs & Power MOSFETs · MPN DMN10H170SK3-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 4.3nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 25.9pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 17W |
| Reverse Transfer Capacitance (Crss@Vds) | 21.4pF |
| RDS(on) | 95mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 196pF |
N-Channel 100V 15A 34.7W Surface Mount TO-252-2L