HXY MOSFET · FETs & Power MOSFETs · MPN DIW065SIC015-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 268nC |
| Drain to Source Voltage | 750V |
| Output Capacitance(Coss) | 482pF |
| Current - Continuous Drain(Id) | 218A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 714W |
| RDS(on) | 15mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.22nF |
750V 218A 2.7V 714W 15mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS