HXY MOSFET CMUDM8005-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN CMUDM8005-HXY

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Specifications

ConfigurationStandalone
Drain to Source Voltage20V
Current - Continuous Drain(Id)660mA
Output Capacitance(Coss)15pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)560mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)115pF
TypeP-Channel

Technical details

P-Channel 20V 660mA 150mW Surface Mount SOT-523

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