HXY MOSFET · FETs & Power MOSFETs · MPN C3M0065090D-HXY
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| Drain to Source Voltage | 900V |
|---|---|
| Gate Charge(Qg) | 35nC |
| Output Capacitance(Coss) | 66pF |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 125W |
| RDS(on) | 78mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 760pF |
| Type | N-Channel |
900V 36A 3.5V 125W 78mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS