HXY MOSFET · FETs & Power MOSFETs · MPN C3M0045065L-TR-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 66.2nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 119pF |
| Current - Continuous Drain(Id) | 63A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 268W |
| RDS(on) | 72mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.41nF |
650V 63A 2.7V 268W 72mΩ 1 N-channel N-Channel TOLLS Single FETs, MOSFETs RoHS