HXY MOSFET · FETs & Power MOSFETs · MPN BSZ0506NSATMA1-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 20nC@4.5V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 277pF |
| Current - Continuous Drain(Id) | 90A |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 46W |
| RDS(on) | 3.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 209pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.088nF |
| Type | N-Channel |
30V 90A 1.6V 46W 3.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS