HXY MOSFET · FETs & Power MOSFETs · MPN BSZ036NE2LSATMA1-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 31.6nC@4.5V |
| Current - Continuous Drain(Id) | 60A |
| Output Capacitance(Coss) | 400pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 315pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.075nF |
30V 60A 2.5V 62.5W 4mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS