HXY MOSFET · FETs & Power MOSFETs · MPN BSS816NWH6327XTSA1-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 55mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 300pF |
| Vgs | ±12V |
N-Channel 20V 2A 0.3W Surface Mount SOT-323