HXY MOSFET BSS131

HXY MOSFET · FETs & Power MOSFETs · MPN BSS131

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Specifications

ConfigurationStandalone
Gate Charge(Qg)2.1nC@10V
Drain to Source Voltage240V
Output Capacitance(Coss)7.3pF
Current - Continuous Drain(Id)100mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)2.8pF
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)58pF

Technical details

N-Channel 240V 0.1A 0.36W Surface Mount SOT-23

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