HXY MOSFET BSS123

HXY MOSFET · FETs & Power MOSFETs · MPN BSS123

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Specifications

ConfigurationStandalone
Drain to Source Voltage100V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)30pF
TypeN-Channel

Technical details

N-Channel 100V 0.17A 0.35W Surface Mount SOT-23

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