HXY MOSFET · FETs & Power MOSFETs · MPN BSS119NH6327XTSA1-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 10pF |
| Current - Continuous Drain(Id) | 170mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 350mW |
| RDS(on) | 6Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 30pF |
| Type | N-Channel |
100V 170mA 2.5V 350mW 6Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS