HXY MOSFET BSO200N03S-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN BSO200N03S-HXY

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Specifications

ConfigurationStandalone
Gate Charge(Qg)9nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)68pF
Current - Continuous Drain(Id)9A
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation3.1W
RDS(on)16mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)52pF
Number1 N-channel
Input Capacitance(Ciss)484pF
TypeN-Channel

Technical details

30V 9A 1.7V 3.1W 16mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS

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