HXY MOSFET BSN20

HXY MOSFET · FETs & Power MOSFETs · MPN BSN20

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Specifications

ConfigurationStandalone
Gate Charge(Qg)800nC@10V
Drain to Source Voltage50V
Output Capacitance(Coss)6pF
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation600mW
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)1.2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)22pF

Technical details

N-Channel 50V 0.5A 0.6W Surface Mount SOT-23

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