HXY MOSFET · FETs & Power MOSFETs · MPN BSC0702LSATMA1-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 74.37nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 2.188nF |
| Current - Continuous Drain(Id) | 125A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 113W |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| RDS(on) | 2.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.61nF |
N-Channel 60V 125A 113W Surface Mount DFN-8(5x6)