HXY MOSFET BSC067N06LS3G-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN BSC067N06LS3G-HXY

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Specifications

Output Capacitance(Coss)286pF
Pd - Power Dissipation108W
ConfigurationStandalone
Gate Charge(Qg)90nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Reverse Transfer Capacitance (Crss@Vds)257pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.136nF

Technical details

N-Channel 60V 80A 108W Surface Mount DFN-8(5x6)

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