HXY MOSFET · FETs & Power MOSFETs · MPN BSC057N08NS3G-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 61.3nC@10V |
| Drain to Source Voltage | 85V |
| Output Capacitance(Coss) | 673pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 107.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 5.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.645nF |
N-Channel 85V 100A 107.8W Surface Mount DFN-8(5x6)