HXY MOSFET · FETs & Power MOSFETs · MPN BSC042N03MS G-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 9.8nC@4.5V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 850pF |
| Current - Continuous Drain(Id) | 90A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.485nF |
N-Channel 30V 120A 187W Surface Mount DFN5x6-8L