HXY MOSFET BD680

HXY MOSFET · Transistors (BJTs) · MPN BD680

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Specifications

Current - Collector Cutoff1uA
Collector - Emitter Voltage VCEO80V
DC Current Gain15000
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation2W
ConfigurationStandalone
Number1 PNP
Current - Collector(Ic)4A
Vce Saturation(VCE(sat))1.8V

Technical details

80V 15000 1 PNP 4A TO-252-2L Single Bipolar Transistors RoHS

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