HXY MOSFET BD138

HXY MOSFET · Transistors (BJTs) · MPN BD138

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

60V 300 1 NPN NPN 1.5A TO-126 Single Bipolar Transistors RoHS

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