HXY MOSFET · Transistors (BJTs) · MPN BCX70GE6327-HXY
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 250MHz |
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 600 |
| Emitter-Base Voltage VEBO | 5V |
| Pd - Power Dissipation | 200mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Vce Saturation(VCE(sat)) | 300mV |
Bipolar (BJT) Transistor 50V 100mA 200mW Surface Mount SOT-23