HXY MOSFET · FETs & Power MOSFETs · MPN AOTF13N50
No reviews yet — be the first to review HXY MOSFET AOTF13N50.
| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 45nC@10V |
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 13A |
| Output Capacitance(Coss) | 23pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 48W |
| RDS(on) | 400mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.15nF |
500V 13A 4V 48W 400mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS