HXY MOSFET · FETs & Power MOSFETs · MPN AOT2618L
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 39nC@10V |
| Output Capacitance(Coss) | 430pF |
| Current - Continuous Drain(Id) | 60A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.05nF |
| Type | N-Channel |
60V 60A 4V 120W 12mΩ@10V 1 N-channel N-Channel TO-220C Single FETs, MOSFETs RoHS