HXY MOSFET · FETs & Power MOSFETs · MPN AONS21321-HXY
No reviews yet — be the first to review HXY MOSFET AONS21321-HXY.
| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 24nC@10V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 215pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 9mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.75nF |
P-Channel 30V 50A 3W Surface Mount DFN-8(5x6)