HXY MOSFET AON7788

HXY MOSFET · FETs & Power MOSFETs · MPN AON7788

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Specifications

Output Capacitance(Coss)277pF
Pd - Power Dissipation46W
ConfigurationStandalone
Drain to Source Voltage30V
Gate Charge(Qg)20nC@4.5V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)3.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)209pF
Number1 N-channel
Input Capacitance(Ciss)2.088nF

Technical details

46W 30V 90A 1.6V 3.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS

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