HXY MOSFET AON7568

HXY MOSFET · FETs & Power MOSFETs · MPN AON7568

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Specifications

Output Capacitance(Coss)400pF
Pd - Power Dissipation62.5W
ConfigurationStandalone
Gate Charge(Qg)31.6nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Reverse Transfer Capacitance (Crss@Vds)315pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.075nF

Technical details

62.5W 30V 60A 2.5V 4mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS

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