HXY MOSFET · FETs & Power MOSFETs · MPN AON6516
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 8nC@4.5V |
| Current - Continuous Drain(Id) | 60A |
| Output Capacitance(Coss) | 498pF |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 4.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 814pF |
| Type | N-Channel |
30V 60A 2.5V 30W 4.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS