HXY MOSFET · FETs & Power MOSFETs · MPN AOD7S65
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 6.6nC |
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 10.2A |
| Output Capacitance(Coss) | 19pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 44.4W |
| RDS(on) | - |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 89pF |
800V 10.2A 2.6V 44.4W 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS