HXY MOSFET AOD607-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN AOD607-HXY

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Specifications

ConfigurationCommon Drain
Gate Charge(Qg)5nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)62pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20.8W
Reverse Transfer Capacitance (Crss@Vds)51pF
RDS(on)16mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)416pF

Technical details

N-Channel+P-Channel Array 30V 20A 20.8W Surface Mount TO-252-4L

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