HXY MOSFET · FETs & Power MOSFETs · MPN AOD603-HXY
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| Configuration | Common Drain |
|---|---|
| Gate Charge(Qg) | 19nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 65pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF |
| RDS(on) | 26mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.027nF |
N-Channel+P-Channel Array 60V 20A 15A 50W Surface Mount TO-252-4L