HXY MOSFET · FETs & Power MOSFETs · MPN AOD21357-HXY
No reviews yet — be the first to review HXY MOSFET AOD21357-HXY.
| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 45nC@10V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 529pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 31.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 487pF |
| RDS(on) | 5.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.32nF |
30V 80A 31.2W Surface Mount TO-252-2L