HXY MOSFET · FETs & Power MOSFETs · MPN AO8822-HXY
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| Configuration | Common Drain |
|---|---|
| Gate Charge(Qg) | 11.3nC@4.5V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.23W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 11.5mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 955pF |
N-Channel Array 20V 7A 1.25W Surface Mount TSSOP-8