HXY MOSFET AO4832-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN AO4832-HXY

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Specifications

Output Capacitance(Coss)120pF
Pd - Power Dissipation3.2W
ConfigurationStandalone
Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)11.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)99pF
RDS(on)10mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)633pF

Technical details

N-Channel Array 30V 11.5A 3.2W Surface Mount SOP-8

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