HXY MOSFET · FETs & Power MOSFETs · MPN AO4822-HXY
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| Gate Charge(Qg) | 6nC@4.5V |
|---|---|
| Configuration | Standalone |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 80pF |
| Current - Continuous Drain(Id) | 8.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 17mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 572pF |
30V 8.5A 2.5V 1.5W 17mΩ@10V 2 N-Channel N-Channel SOP-8 Single FETs, MOSFETs RoHS