HXY MOSFET AO4720

HXY MOSFET · FETs & Power MOSFETs · MPN AO4720

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Specifications

ConfigurationStandalone
Drain to Source Voltage30V
Gate Charge(Qg)8nC@4.5V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation2.2W
RDS(on)9mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)94pF
Number1 N-channel
Input Capacitance(Ciss)580pF
TypeN-Channel

Technical details

30V 10A 1.4V 2.2W 9mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS

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