HXY MOSFET · FETs & Power MOSFETs · MPN AO4576
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 12.6nC@4.5V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 18A |
| Output Capacitance(Coss) | 163pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 131pF |
| RDS(on) | 5.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.317nF |
30V 18A 1.5V 1.5W 5.5mΩ@10V 1 N-channel N-Channel SOP-8 Single FETs, MOSFETs RoHS