HXY MOSFET AO3442-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN AO3442-HXY

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Specifications

ConfigurationStandalone
Gate Charge(Qg)5.2nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.3W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)220mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)320pF

Technical details

N-Channel 100V 3A 2.3W Surface Mount SOT-23-3L

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