HXY MOSFET AO3418-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN AO3418-HXY

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Specifications

ConfigurationStandalone
Gate Charge(Qg)9.1nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)52pF
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)43pF
RDS(on)24mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)507pF

Technical details

N-Channel 30V 5.8A 1.4W Surface Mount SOT-23-3L

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