HXY MOSFET · FETs & Power MOSFETs · MPN AO3400H
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 10nC@4.5V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 100pF |
| Current - Continuous Drain(Id) | 5.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 78pF |
| RDS(on) | 28mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 825pF |
30V 5.8A 900mV 1.4W 28mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS