HXY MOSFET · FETs & Power MOSFETs · MPN AO3400
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 4.8nC@4.5V |
| Output Capacitance(Coss) | 56pF |
| Current - Continuous Drain(Id) | 6A |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 20mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 602pF |
| Type | N-Channel |
30V 6A 900mV 2.5W 20mΩ@10V 1 N-channel N-Channel SOT-89 Single FETs, MOSFETs RoHS