HXY MOSFET · FETs & Power MOSFETs · MPN AIMZH120R060M1TXKSA1-HXY
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Gate Charge(Qg) | 137nC |
| Output Capacitance(Coss) | 122pF |
| Current - Continuous Drain(Id) | 69A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 426W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 70mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.073nF |
1.2kV 69A 4.5V 426W 70mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS