HXY MOSFET · FETs & Power MOSFETs · MPN 60N02-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 27nC@10V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 500pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 750mV |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 4.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
20V 60A 750mV 60W 4.5mΩ@4.5V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS