HXY MOSFET 5N50

HXY MOSFET · FETs & Power MOSFETs · MPN 5N50

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Specifications

ConfigurationStandalone
Gate Charge(Qg)14nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)42pF
Current - Continuous Drain(Id)5A
Operating Temperature --45℃~+125℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)1.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)582pF

Technical details

N-Channel 500V 5A 75W Surface Mount TO-252-2L

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