HXY MOSFET · FETs & Power MOSFETs · MPN 4N65F
No reviews yet — be the first to review HXY MOSFET 4N65F.
| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 14.5nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 53pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF |
| RDS(on) | 2.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 610pF |
N-Channel 650V 4A 30W Through Hole TO-220F