HXY MOSFET 2N7002T

HXY MOSFET · FETs & Power MOSFETs · MPN 2N7002T

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Specifications

ConfigurationStandalone
Drain to Source Voltage60V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)115mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation150mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)1.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)50pF
TypeN-Channel

Technical details

N-Channel 60V 0.115A 0.15W Surface Mount SOT-523

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