HXY MOSFET · FETs & Power MOSFETs · MPN 2N60L
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 9.5nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 33pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -45℃~+125℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 4.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 335pF |
N-Channel 650V 2A 35W Surface Mount TO252-2L